Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO
DC Field | Value | Language |
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dc.contributor.author | Lee, Seung-Hwan | - |
dc.contributor.author | Lee, Jung-Hoon | - |
dc.contributor.author | Choi, Seong-Jin | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-08-02T14:53:15Z | - |
dc.date.available | 2021-08-02T14:53:15Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-07 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19558 | - |
dc.description.abstract | The thermoelectric transport properties of atomic layer deposited (ALD) gallium doped zinc oxide (GZO) thin films were investigated to identify their potential as a thermoelectric material. The overall thermoelectric properties, such as the Seebeck coefficient and electrical conductivity, were probed as a function of Ga concentration in ZnO. The doping concentration was tuned by varying the ALD cycle ratio of zinc oxide and gallium oxide. The GZO was deposited at 250 degrees C and the doping concentration was modified from 1% to 10%. Sufficient thermoelectric properties appeared at a doping concentration of 1%. The crystallinity and electronic state, such as the effective mass, were investigated to determine the enhancement of the thermoelectric properties. The efficient Ga doping of GZO showed a Seebeck coefficient of 60 mu V/K and an electrical conductivity of 1808.32 S/cm, with a maximum power factor of 0.66 mW/mK². | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1016/j.ceramint.2017.03.087 | - |
dc.identifier.scopusid | 2-s2.0-85015331504 | - |
dc.identifier.wosid | 000400880000057 | - |
dc.identifier.bibliographicCitation | CERAMICS INTERNATIONAL, v.43, no.10, pp.7784 - 7788 | - |
dc.relation.isPartOf | CERAMICS INTERNATIONAL | - |
dc.citation.title | CERAMICS INTERNATIONAL | - |
dc.citation.volume | 43 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 7784 | - |
dc.citation.endPage | 7788 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | SINGLE-CRYSTAL | - |
dc.subject.keywordPlus | EFFECTIVE-MASS | - |
dc.subject.keywordPlus | POWER-FACTOR | - |
dc.subject.keywordPlus | WASTE HEAT | - |
dc.subject.keywordPlus | ZINC | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | GENERATOR | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Thermoelectrics | - |
dc.subject.keywordAuthor | Ga doped ZnO | - |
dc.subject.keywordAuthor | Thin films | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0272884217304595?via%3Dihub | - |
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