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Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sang Woo | - |
| dc.contributor.author | Shin, Wonjun | - |
| dc.contributor.author | Kim, Munhyeon | - |
| dc.contributor.author | Kwon, Ki Ryun | - |
| dc.contributor.author | Yim, Jiyong | - |
| dc.contributor.author | Kim, Jeonghan | - |
| dc.contributor.author | Han, Changhyeon | - |
| dc.contributor.author | Jeong, Soi | - |
| dc.contributor.author | Park, Eun Chan | - |
| dc.contributor.author | You, Ji Won | - |
| dc.contributor.author | Kim, Hyunwoo | - |
| dc.contributor.author | Choi, Rino | - |
| dc.contributor.author | Kwon, Daewoong | - |
| dc.date.accessioned | 2024-11-28T09:31:34Z | - |
| dc.date.available | 2024-11-28T09:31:34Z | - |
| dc.date.issued | 2023-12 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.issn | 1558-0563 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/196080 | - |
| dc.description.abstract | A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with SiO2 IL, the proposed FeFET is confirmed to have faster program/erase operations, wider memory window, and the improved endurance/retention characteristics due to the higher dielectric constant of HfSiOx and superior interfacial state between HfxZr((1-x))O-2 and IL. The proposed FeFET demonstrates a power spectral density that is approximately two times smaller than that of conventional FeFETs and endurance exceeding 1010 cycles. This underscores its enhanced suitability for neuromorphic computing applications. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/LED.2023.3324695 | - |
| dc.identifier.scopusid | 2-s2.0-85176380797 | - |
| dc.identifier.wosid | 001152564000013 | - |
| dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.44, no.12, pp 1955 - 1958 | - |
| dc.citation.title | IEEE Electron Device Letters | - |
| dc.citation.volume | 44 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 1955 | - |
| dc.citation.endPage | 1958 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
| dc.subject.keywordAuthor | FeFETs | - |
| dc.subject.keywordAuthor | Iron | - |
| dc.subject.keywordAuthor | Threshold voltage | - |
| dc.subject.keywordAuthor | Hafnium compounds | - |
| dc.subject.keywordAuthor | Zirconium | - |
| dc.subject.keywordAuthor | Capacitance | - |
| dc.subject.keywordAuthor | Ferroelectric FET | - |
| dc.subject.keywordAuthor | HZO | - |
| dc.subject.keywordAuthor | high-kappa interlayer | - |
| dc.subject.keywordAuthor | synaptic devices | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/10290996 | - |
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Related Researcher
- Kwon, Daewoong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)