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Development of Highly Dense Material-Specific Fluorophore Labeling Method on Silicon-Based Semiconductor Materials for Three-Dimensional Multicolor Super-Resolution Fluorescence Imaging

Authors
Jeong, UidonJeong, DokyungGo, SeokranPark, HyunbumKim, Geun-HoKim, NamyoonJung, JaehwangKim, WookraeLee, MyungjunChoi, ChanghoonKim, Doory
Issue Date
Jul-2023
Publisher
AMER CHEMICAL SOC
Citation
CHEMISTRY OF MATERIALS, v.35, no.14, pp 5572 - 5581
Pages
10
Indexed
SCIE
SCOPUS
Journal Title
CHEMISTRY OF MATERIALS
Volume
35
Number
14
Start Page
5572
End Page
5581
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/196460
DOI
10.1021/acs.chemmater.3c01073
ISSN
0897-4756
1520-5002
Abstract
The recent development of super-resolution fluorescencemicroscopy(SRM) has drastically improved the resolution of light microscopyto the order of tens of nanometers. However, the application of SRMto semiconductor materials remains challenging because fluorophorelabeling on inorganic materials with a high labeling density requiredfor nanoimaging has been limited with conventional surface functionalizationmethods. Here, a novel approach for highly dense material-specificfluorophore labeling methods on silicon-based materials has been developedand demonstrated for SRM imaging of semiconductor line patterns. Thisapproach is shown to selectively and sensitively probe different-sizedsilicon and silica line patterned arrays including edge structureson a wafer in three dimension, which has not been resolved by a conventionalmetrology system. Furthermore, we successfully demonstrate that thisnew method can detect nanoparticle defects with high sensitivity,suggesting its capability as an inspection tool for semiconductordefects. This new nanomaterial imaging approach is expected to drivefurther innovations in metrology tools and applications.
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