The Enhancement of Electrical Characteristics of Tunneling Field-Effect Transistors with the Buried Cylindrical Gate

Abstract

The enhancements of electrical characteristics of the tunneling field-effect-transistors (TFETs) with the buried-cylindrical-gate were investigated by simulation. The gate of the TFETs was buried inside the channel instead of positioning the gate outside the channel to enhance the band-to-band tunneling (BTBT) rate from the source to the channel region. The electrostatic potential and the electric field of the TFETs with the buried-cylindrical-gate were increased as compared with the conventional TFETs. Tunneling distance was decreased and the BTBT rate was increased due to the buried gate inside the channel region. The decreased tunneling distance and increased BTBT rate increased the on-current level. The slope of the energy band of the channel region for the TFETs with the buried-cylindrical-gate was steeper than that of the conventional TFETs, and the corresponding threshold voltage was lower than that of the conventional TFETs. The simulation results showed that the electrical characteristics of the TFETs with the buried-cylindrical-gate were enhanced resulting from the buried gate inside the channel.