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Programmable Threshold Logic Implementations in a Memristor Crossbar Array
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Youn, Sangwook | - |
| dc.contributor.author | Lee, Jungjin | - |
| dc.contributor.author | Kim, Sungjoon | - |
| dc.contributor.author | Park, Jinwoo | - |
| dc.contributor.author | Kim, Kyuree | - |
| dc.contributor.author | Kim, Hyungjin | - |
| dc.date.accessioned | 2024-11-28T14:01:06Z | - |
| dc.date.available | 2024-11-28T14:01:06Z | - |
| dc.date.issued | 2024-03 | - |
| dc.identifier.issn | 1530-6984 | - |
| dc.identifier.issn | 1530-6992 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/196726 | - |
| dc.description.abstract | In this study, we demonstrate the implementation of programmable threshold logics using a 32 x 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the annealing process, its accurate programming characteristics are presented by a 256-level grayscale image. By simultaneous subtraction between weighted sum and threshold values with a differential pair in an opposite way, 3-input and 4-input Boolean logics are implemented in the crossbar without additional reference bias. Also, we verify a full-adder circuit and analyze its fidelity, depending on the device programming accuracy. Lastly, we successfully implement a 4-bit ripple carry adder in the crossbar and achieve reliable operations by read-based logic operations. Compared to stateful logic driven by device switching, a 4-bit ripple carry adder on a memristor crossbar array can perform more reliably in fewer steps thanks to its read-based parallel logic operation. | - |
| dc.format.extent | 9 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Chemical Society | - |
| dc.title | Programmable Threshold Logic Implementations in a Memristor Crossbar Array | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1021/acs.nanolett.3c04073 | - |
| dc.identifier.scopusid | 2-s2.0-85187666105 | - |
| dc.identifier.wosid | 001183908200001 | - |
| dc.identifier.bibliographicCitation | Nano Letters, v.24, no.12, pp 3581 - 3589 | - |
| dc.citation.title | Nano Letters | - |
| dc.citation.volume | 24 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 3581 | - |
| dc.citation.endPage | 3589 | - |
| dc.type.docType | Article; Early Access | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | MEMORY | - |
| dc.subject.keywordPlus | OPERATIONS | - |
| dc.subject.keywordAuthor | memristors | - |
| dc.subject.keywordAuthor | neuromorphic | - |
| dc.subject.keywordAuthor | computing-in-memory | - |
| dc.subject.keywordAuthor | threshold logic | - |
| dc.subject.keywordAuthor | full adder | - |
| dc.identifier.url | https://pubs.acs.org/doi/10.1021/acs.nanolett.3c04073 | - |
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