Programmable Threshold Logic Implementations in a Memristor Crossbar Array
- Authors
- Youn, Sangwook; Lee, Jungjin; Kim, Sungjoon; Park, Jinwoo; Kim, Kyuree; Kim, Hyungjin
- Issue Date
- Mar-2024
- Publisher
- American Chemical Society
- Keywords
- memristors; neuromorphic; computing-in-memory; threshold logic; full adder
- Citation
- Nano Letters, v.24, no.12, pp 3581 - 3589
- Pages
- 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- Nano Letters
- Volume
- 24
- Number
- 12
- Start Page
- 3581
- End Page
- 3589
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/196726
- DOI
- 10.1021/acs.nanolett.3c04073
- ISSN
- 1530-6984
1530-6992
- Abstract
- In this study, we demonstrate the implementation of programmable threshold logics using a 32 x 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the annealing process, its accurate programming characteristics are presented by a 256-level grayscale image. By simultaneous subtraction between weighted sum and threshold values with a differential pair in an opposite way, 3-input and 4-input Boolean logics are implemented in the crossbar without additional reference bias. Also, we verify a full-adder circuit and analyze its fidelity, depending on the device programming accuracy. Lastly, we successfully implement a 4-bit ripple carry adder in the crossbar and achieve reliable operations by read-based logic operations. Compared to stateful logic driven by device switching, a 4-bit ripple carry adder on a memristor crossbar array can perform more reliably in fewer steps thanks to its read-based parallel logic operation.
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