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Programmable Threshold Logic Implementations in a Memristor Crossbar Array

Authors
Youn, SangwookLee, JungjinKim, SungjoonPark, JinwooKim, KyureeKim, Hyungjin
Issue Date
Mar-2024
Publisher
American Chemical Society
Keywords
memristors; neuromorphic; computing-in-memory; threshold logic; full adder
Citation
Nano Letters, v.24, no.12, pp 3581 - 3589
Pages
9
Indexed
SCIE
SCOPUS
Journal Title
Nano Letters
Volume
24
Number
12
Start Page
3581
End Page
3589
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/196726
DOI
10.1021/acs.nanolett.3c04073
ISSN
1530-6984
1530-6992
Abstract
In this study, we demonstrate the implementation of programmable threshold logics using a 32 x 32 memristor crossbar array. Thanks to forming-free characteristics obtained by the annealing process, its accurate programming characteristics are presented by a 256-level grayscale image. By simultaneous subtraction between weighted sum and threshold values with a differential pair in an opposite way, 3-input and 4-input Boolean logics are implemented in the crossbar without additional reference bias. Also, we verify a full-adder circuit and analyze its fidelity, depending on the device programming accuracy. Lastly, we successfully implement a 4-bit ripple carry adder in the crossbar and achieve reliable operations by read-based logic operations. Compared to stateful logic driven by device switching, a 4-bit ripple carry adder on a memristor crossbar array can perform more reliably in fewer steps thanks to its read-based parallel logic operation.
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