High-Performance Zinc Tin Oxide Semiconductor Grown by Atmospheric-Pressure Mist-CVD and the Associated Thin-Film Transistor Properties
DC Field | Value | Language |
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dc.contributor.author | Park, Jozeph | - |
dc.contributor.author | Oh, Keun-Tae | - |
dc.contributor.author | Kim, Dong-Hyun | - |
dc.contributor.author | Jeong, Hyun-Jun | - |
dc.contributor.author | Park, Yun Chang | - |
dc.contributor.author | Kim, Hyun-Suk | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-08-02T14:55:29Z | - |
dc.date.available | 2021-08-02T14:55:29Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19682 | - |
dc.description.abstract | Zinc tin oxide (Zn-Sn-O, or ZTO) semiconductor layers were synthesized based on solution processes, of which one type involves the conventional spin coating method and the other is grown by mist chemical vapor deposition (mist-CVD). Liquid precursor solutions are used in each case, with tin chloride and zinc chloride (1:1) as solutes in solvent mixtures of acetone and deionized water. Mist-CVD ZTO films are mostly polycrystalline, while those synthesized by spin-coating are amorphous. Thin-film transistors based on mist-CVD ZTO active layers exhibit excellent electron transport properties with a saturation mobility of 14.6 cm²/(V s), which is superior to that of their spin-coated counterparts (6.88 cm²/(V s)). X-ray photoelectron spectroscopy (XPS) analyses suggest that the mist-CVD ZTO films contain relatively small amounts of oxygen vacancies and, hence, lower free-carrier concentrations. The enhanced electron mobility of mist-CVD ZTO is therefore anticipated to be associated with the electronic band structure, which is examined by X-ray absorption near-edge structure (XANES) analyses, rather than the density of electron carriers. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | High-Performance Zinc Tin Oxide Semiconductor Grown by Atmospheric-Pressure Mist-CVD and the Associated Thin-Film Transistor Properties | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1021/acsami.7b04235 | - |
dc.identifier.scopusid | 2-s2.0-85021177188 | - |
dc.identifier.wosid | 000404090000044 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.24, pp.20656 - 20663 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 9 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 20656 | - |
dc.citation.endPage | 20663 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | ZNO FILMS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordAuthor | Mist - CVD | - |
dc.subject.keywordAuthor | sol-gel process | - |
dc.subject.keywordAuthor | zinc tin oxide | - |
dc.subject.keywordAuthor | tin films transistors (tfts) | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | atmospheric pressure | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.7b04235 | - |
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