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Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al₂O₃ composition in atomic layer deposited HfAlOx gate dielectrics
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lim, Donghwan | - |
| dc.contributor.author | Lee, Jae Ho | - |
| dc.contributor.author | Choi, Changhwan | - |
| dc.date.accessioned | 2021-08-02T14:55:34Z | - |
| dc.date.available | 2021-08-02T14:55:34Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2017-06 | - |
| dc.identifier.issn | 0167-9317 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19688 | - |
| dc.description.abstract | We have studied the electrical characteristics of both n-type and p-type fully depleted silicon on insulator (FDSOI) tunnel field-effect transistors (TFETs) by modulating Al₂O₃ fraction (25%, 50%) within atomic layer deposited HfAlOx gate dielectric. Compared to HfO₂ alone, lower subthreshold swing (S.S), higher I-on,/I-off, and stronger threshold voltage (V-th) immunity against electrical stress are obtained for both n-type and p-type TFETs by adopting nano-laminated atomic layer deposited HfAlOx, attributed to the increased band gap and interfacial layer scavenging effect. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER | - |
| dc.title | Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al₂O₃ composition in atomic layer deposited HfAlOx gate dielectrics | - |
| dc.title.alternative | Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
| dc.identifier.doi | 10.1016/j.mee.2017.05.039 | - |
| dc.identifier.scopusid | 2-s2.0-85019853403 | - |
| dc.identifier.wosid | 000404703800061 | - |
| dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.178, pp.266 - 270 | - |
| dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
| dc.citation.title | MICROELECTRONIC ENGINEERING | - |
| dc.citation.volume | 178 | - |
| dc.citation.startPage | 266 | - |
| dc.citation.endPage | 270 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Optics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | TFET | - |
| dc.subject.keywordAuthor | Subthreshold swing | - |
| dc.subject.keywordAuthor | Hafnium aluminum oxide | - |
| dc.subject.keywordAuthor | Atomic layer deposition | - |
| dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167931717302368?via%3Dihub | - |
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)