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Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Filmsopen access
- Authors
- Song, Seokhwi; Kim, Eungju; Kim, Kyunghoo; Bae, Jangho; Lee, Jinho; Jung, Chang Hwa; Lim, Hanjin; Jeon, Hyeongtag
- Issue Date
- Jan-2024
- Publisher
- IOP Publishing
- Keywords
- atomic layer deposition; dielectrics - high-k; X-ray diffraction
- Citation
- ECS Advances, v.3, no.1, pp 1 - 5
- Pages
- 5
- Indexed
- SCOPUS
- Journal Title
- ECS Advances
- Volume
- 3
- Number
- 1
- Start Page
- 1
- End Page
- 5
- ISSN
- 2754-2734
- Abstract
- We investigated Ti-doped ZrO2 deposition using a cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe2)3) precursor and a titanium tetraisopropoxide (TTIP) precursor using an O3 thermal atomic layer deposition process. In addition, the effect of Ti doping concentration on the chemical bonding and electrical properties of the Ti-doped ZrO2 thin films was studied. O3 was used at a high concentration of 400 g m−3. We varied the Ti doping concentration by controlling the rate of the supercycle process in the ZrO2 process window of 200 °C-300 °C. As a result, the highest dielectric constant was observed at a Ti doping concentration of 2.5% because it enhances the crystallinity of ZrO. Excessive Ti doping hinders crystal formation.
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Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
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