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Hierarchical Nanostructures CuBi2O4 Integrated with Polyaniline Nanofibrous for Boosting Hole Extraction in Carbon-Based Perovskite Solar Cells

Authors
Liu, MinZhong, ZhenwuRiaz, SalmanQi, ZhaoxiangQi, YingWei, PengMi, HongyuCheng, JianKo, Min JaeXie, Yahong
Issue Date
Oct-2024
Publisher
American Chemical Society
Keywords
CuBi2O4; polyaniline; MAPbI(3); carbon-based perovskite solar cells; hole transport layer
Citation
ACS Applied Materials & Interfaces, v.16, no.41, pp 56414 - 56426
Pages
13
Indexed
SCIE
SCOPUS
Journal Title
ACS Applied Materials & Interfaces
Volume
16
Number
41
Start Page
56414
End Page
56426
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/197959
DOI
10.1021/acsami.4c13558
ISSN
1944-8244
1944-8252
Abstract
Toward commercialization of carbon-based perovskite solar cells (C-PSCs), it is crucial to innovatively design inorganic hole transport layer materials that excel in extracting and transporting charge carriers to promote their photoelectric conversion efficiency (PCE). In this work, a novel and high-connectivity CuBi2O4-polyaniline nanofibrous (CuBi2O4-PN) reticular structure is created by integrating CuBi2O4 hierarchical microspheres (CuBi2O4 MS) with polyaniline nanofibrous. The introduction of CuBi2O4-PN as a hole transport layer (HTL) notably enhances the contact quality of the devices and substantially reduces the surface defects of C-PSCs. In a comparative analysis under identical experimental conditions, MAPbI3 devices incorporating CuBi2O4-PN HTL demonstrated a PCE of 14.79%, achieving a 44.3% increase over the reference device (10.25%). CuBi2O4-treated C-PSCs retained 89.9% of their original PCE after 45 days in storage, and they demonstrated improved stability over a longer time frame. This remarkable improvement in device performance can be attributed to the effective suppression of nonradiative recombination and the enhancement of the carrier transfer process in the device. Additionally, the unique interconnected reticular structure of CuBi2O4-PN provides efficient pathways for hole transfer, significantly contributing to the enhanced efficiency of the device.
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