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Enhanced reliability and stability ina-COxNy based random access memory device

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dc.contributor.author홍진표-
dc.date.accessioned2024-11-29T21:00:27Z-
dc.date.available2024-11-29T21:00:27Z-
dc.date.issued2023-11-20-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/198681-
dc.titleEnhanced reliability and stability ina-COxNy based random access memory device-
dc.typeConference-
dc.citation.conferenceNameKorean international semiconductor conference on manufacturing technology 2023-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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