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Focus에 따른 마스크 특성 변화 완화가 가능한high-NA EUV 노광 공정용 high-k binary 마스크 연구
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안진호 | - |
| dc.date.accessioned | 2024-12-01T11:00:28Z | - |
| dc.date.available | 2024-12-01T11:00:28Z | - |
| dc.date.issued | 2024-01-24 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/198920 | - |
| dc.title | Focus에 따른 마스크 특성 변화 완화가 가능한high-NA EUV 노광 공정용 high-k binary 마스크 연구 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 31th Korean Conference on Semiconductors | - |
| dc.citation.conferencePlace | 경주화백컨벤션센터 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)