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First Demonstration of 3D Vertical Gate-All-Around (GAA) NAND Flash Memory Using ALD Ferroelectric HZO and IGO Channel
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2024-12-04T10:30:36Z | - |
| dc.date.available | 2024-12-04T10:30:36Z | - |
| dc.date.issued | 2023-02-14 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/199947 | - |
| dc.title | First Demonstration of 3D Vertical Gate-All-Around (GAA) NAND Flash Memory Using ALD Ferroelectric HZO and IGO Channel | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국반도체학술대회 (KCS) | - |
| dc.citation.conferencePlace | 정선 하이원 그랜드 호텔 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)