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Improving Specific Contact Resistivity of amorphous IGZO Thin-Film Transistors through ALD-AZO IL and Optimal Annealing Temperature
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정재경 | - |
| dc.date.accessioned | 2024-12-05T09:30:25Z | - |
| dc.date.available | 2024-12-05T09:30:25Z | - |
| dc.date.issued | 2024-03-28 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/200650 | - |
| dc.title | Improving Specific Contact Resistivity of amorphous IGZO Thin-Film Transistors through ALD-AZO IL and Optimal Annealing Temperature | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | ITC 2024 | - |
| dc.citation.conferencePlace | KAIST, Korea | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)