Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors

Abstract

The reliability of inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under dc stress and its potential impact on the performance of basic analog amplifiers are investigated. In order to properly reflect the stress effects in various circuit applications, the degradations under three different configurations (active bias, diode connection, and off state) were experimentally characterized with the stress voltages applied up to 3000 s for each case. Based on the changes in the Gummel response, the degradations in device parameters such as current gain (β), transconductance (gm), and base-to-emitter resistance (rπ) were extracted and compared with the forward-mode counterpart. In addition, with the use of a small-signal equivalent model of a SiGe HBT, simple single-stage analog amplifiers were simulated as representative examples and their circuit-level performance metrics including gain and bandwidth were studied to estimate degradation characteristics with accumulated stress. It was found that transimpedance gain decreases and operation bandwidth increases to different levels due to device degradation, whereas a voltage amplifier exhibited much less changes.