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Device-level voltage control scheme of MLC NAND flash memory for storage power failure recovery
- Authors
- Jung, Sanghyu; Song, Yong Ho
- Issue Date
- Jan-2013
- Citation
- Digest of Technical Papers - IEEE International Conference on Consumer Electronics, pp 544 - 545
- Pages
- 2
- Indexed
- SCOPUS
- Start Page
- 544
- End Page
- 545
- ISSN
- 0747-668X
- Abstract
- MLC NAND flash memory has been widely used as a storage device in mobile and desktop computing systems. However, MLC NAND flash memory may cause a data loss problem because the LSB-page programmed data can be lost when a power failure occurs in the middle of a MSB-page program operation. In this paper, we propose a device-level voltage control scheme in order to overcome this problem. With the theoretical feasibility of our proposed scheme, the storage controller could fully restore the LSB-page programmed data at device-level after a power failure.
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