Reliability of Cu to Cu joints fabricated using SnAg capping layer for 3D TSV applications
- Authors
- Ma, Sung Woo; Lee, Jeong Hwan; Lee, Jin Su; Kim, Ki Bum; Suh, Min Suk; Kim, Nam Seog; Kim, Young Ho
- Issue Date
- Feb-2014
- Publisher
- Trans Tech Publications
- Keywords
- Daisy chain; HTS; NCP; Reliability; T/C; TSV
- Citation
- Advanced Materials Research, v.900, pp 711 - 714
- Pages
- 4
- Indexed
- SCOPUS
- Journal Title
- Advanced Materials Research
- Volume
- 900
- Start Page
- 711
- End Page
- 714
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/202842
- DOI
- 10.4028/www.scientific.net/AMR.900.711
- ISSN
- 1022-6680
1662-8985
- Abstract
- Chip to Chip bonding technology using Cu bumps with solder capping layer has been widely investigated for 3D chip stacking applications. We studied the reliability of the Cu joints. Cu bumps capped with Sn-Ag solder layer were joined to bare Cu pads or Au/Ni electroplated Cu pads at 300°C for 10 sec after dispensing non-conductive paste (NCP). After joining, there were no failed joints and the contact resistance of the joints was very low in all specimens. High temperature storage (HTS) test (120°C, up to 2000 hrs) results demonstrated that the reliability was good in all specimens, while thermal cycling test (-55°C /+125°C, up to 2500 cycles) results showed that the contact resistance of the joints increased quickly after 2000 cycles which was attributed the crack formation in the joint interfaces. © (2014) Trans Tech Publications, Switzerland.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.