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Inverse design of high-NA metalens for maskless lithographyopen access

Authors
Chung, HaejunZhang, FengLi, HaoMiller, Owen D. D.Smith, Henry I. I.
Issue Date
Jun-2023
Publisher
WALTER DE GRUYTER GMBH
Keywords
inverse design; maskless lithography; metalens
Citation
Nanophotonics, v.12, no.13, pp 2371 - 2381
Pages
11
Indexed
SCIE
SCOPUS
Journal Title
Nanophotonics
Volume
12
Number
13
Start Page
2371
End Page
2381
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/203760
DOI
10.1515/nanoph-2022-0761
ISSN
2192-8606
2192-8614
Abstract
We demonstrate an axisymmetric inverse-designed metalens to improve the performance of zone-plate-array lithography (ZPAL), one of the maskless lithography approaches, that offer a new paradigm for nanoscale research and industry. First, we derive a computational upper bound for a unit-cell-based axisymmetric metalens. Then, we demonstrate a fabrication-compatible inverse-designed metalens with 85.50% transmission normalized focusing efficiency at 0.6 numerical aperture at 405 nm wavelength; a higher efficiency than a theoretical gradient index lens design (79.98%). We also demonstrate experimental validation for our axisymmetric inverse-designed metalens via electron beam lithography. Metalens-based maskless lithography may open a new way of achieving low-cost, large-area nanofabrication.
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