Small VCO-Gain Variation Adding a Bias-Shifted Inversion-Mode MOS Varactoropen access
- Authors
- Lim, Chang-Woo; Noh, Hong-Yeoul; Yun, Tae-Yeoul
- Issue Date
- Apr-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Inversion-mode MOS (I-MOS) varactor; voltage-controlled oscillator (VCO) gain (KVCO); VCO-gain variation (Delta KVCO)
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.27, no.4, pp.395 - 397
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 27
- Number
- 4
- Start Page
- 395
- End Page
- 397
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20438
- DOI
- 10.1109/LMWC.2017.2678431
- ISSN
- 1531-1309
- Abstract
- This letter proposes a small voltage-controlled oscillator (VCO)-gain variation (Delta KVCO) technique using the capacitance-slope change of the varactor, which is achieved by adding a bias-shifted inversion-mode MOS varactor in parallel with a conventional accumulation-mode MOS varactor. This technique is investigated via theoretical analysis, which is confirmed by simulation and measurement. The proposed VCO shows a phase noise of -116.4 dBc/Hz at a 1-MHz offset frequency at 2.36 GHz, a figure of merit of -185 dBc/Hz, and a Delta KVCO of less than 8.6% over a frequency tuning range from 1.73 to 2.36 GHz while consuming 0.76 mW from a 0.8-V supply voltage. It was implemented using a 110-nm CMOS process with a chip area of 0.95 mm(2).
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