Enhancement of the electrical characteristics for vertical NAND flash memory devices using a modified array structure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, Sung Woo | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-08-02T15:29:13Z | - |
dc.date.available | 2021-08-02T15:29:13Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20449 | - |
dc.description.abstract | The electrical characteristics of vertical NAND flash memory devices with a modified structure were investigated by using a technology computer-aided design simulation tool in order to reduce the cell-to-cell interference. The threshold voltage shift of memory devices with a modified cell with a protruding distance of 3 nm was reduced by 88% compared to that of conventional cell. When the programming operation of the target cell with a modified array structure is performed, the cell-to-cell interference decreases due to the programmed charges of adjacent cells. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Enhancement of the electrical characteristics for vertical NAND flash memory devices using a modified array structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.7567/JJAP.56.048003 | - |
dc.identifier.scopusid | 2-s2.0-85082776421 | - |
dc.identifier.wosid | 000425218600003 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.56, no.4 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 56 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FLOATING-GATE | - |
dc.subject.keywordPlus | CELL | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | SCHEMES | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.56.048003 | - |
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