Enhancement of the electrical characteristics for vertical NAND flash memory devices using a modified array structure
- Authors
- An, Sung Woo; Kim, Tae Whan
- Issue Date
- Apr-2017
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.56, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 56
- Number
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20449
- DOI
- 10.7567/JJAP.56.048003
- ISSN
- 0021-4922
- Abstract
- The electrical characteristics of vertical NAND flash memory devices with a modified structure were investigated by using a technology computer-aided design simulation tool in order to reduce the cell-to-cell interference. The threshold voltage shift of memory devices with a modified cell with a protruding distance of 3 nm was reduced by 88% compared to that of conventional cell. When the programming operation of the target cell with a modified array structure is performed, the cell-to-cell interference decreases due to the programmed charges of adjacent cells.
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