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Impacts of Annealing on the Operation Characteristics of Phase Change Memory Using Ge2Sb2Te5 (GST) Material
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2025-01-08T12:00:21Z | - |
| dc.date.available | 2025-01-08T12:00:21Z | - |
| dc.date.issued | 2024-01-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/204932 | - |
| dc.title | Impacts of Annealing on the Operation Characteristics of Phase Change Memory Using Ge2Sb2Te5 (GST) Material | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 31회 한국반도체학술대회 (KCS) | - |
| dc.citation.conferencePlace | 경주화백컨벤션센터 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)