Thickness-dependent structure and properties of SnS₂ thin films prepared by atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Seo, Wondeok | - |
dc.contributor.author | Shin, Seokyoon | - |
dc.contributor.author | Ham, Giyul | - |
dc.contributor.author | Lee, Juhyun | - |
dc.contributor.author | Lee, Seungjin | - |
dc.contributor.author | Choi, Hyeongsu | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2021-08-02T15:31:00Z | - |
dc.date.available | 2021-08-02T15:31:00Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20518 | - |
dc.description.abstract | Tin disulfide (SnS₂) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS₂ were investigated as a function of the film thickness. SnS₂ exhibited a (001) hexagonal plane peak at 14.9 ° in the X-ray diffraction (XRD) results and an A(1g) peak at 311 cm⁻¹ in the Raman spectra. These results demonstrate that SnS₂ thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2nm. The crystallinity of the SnS₂ thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS₂ consisted of Sn⁴⁺ and S²⁻ valence states. Both the optical band gap and the transmittance of SnS₂ decreased as the film thickness increased. The band gap of SnS₂ decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400nm. In addition, the resistivity of the thin film SnS₂ decreased from 10¹¹ to 10⁶ Ω·cm as the film thickness increased. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Thickness-dependent structure and properties of SnS₂ thin films prepared by atomic layer deposition | - |
dc.title.alternative | Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.7567/JJAP.56.031201 | - |
dc.identifier.scopusid | 2-s2.0-85014416191 | - |
dc.identifier.wosid | 000395114600001 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.56, no.3 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 56 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MOS2 TRANSISTORS | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | SOLAR-CELL | - |
dc.subject.keywordPlus | TIN | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.56.031201 | - |
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