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MoO2 Film Fabrication Via Atomic Layer Deposition with Mo(IV) Precursor and Oxygen and Ozone reactant for DRAM Applications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진성 | - |
| dc.date.accessioned | 2025-01-09T06:00:29Z | - |
| dc.date.available | 2025-01-09T06:00:29Z | - |
| dc.date.issued | 2024-01-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/205240 | - |
| dc.title | MoO2 Film Fabrication Via Atomic Layer Deposition with Mo(IV) Precursor and Oxygen and Ozone reactant for DRAM Applications | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | KCS 2024 | - |
| dc.citation.conferencePlace | 경주화백컨벤션센터 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)