Comparative Study of Antimony Doping Effects on the Performance of Solution-Processed ZIO and ZTO Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Baek, Jong Han | - |
dc.contributor.author | Seol, Hyunju | - |
dc.contributor.author | Cho, Kilwon | - |
dc.contributor.author | Yang, Hoichang | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-08-02T15:31:20Z | - |
dc.date.available | 2021-08-02T15:31:20Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-03 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20535 | - |
dc.description.abstract | ZnO-based oxide films are emerging as high-performance semiconductors for field-effect transistors (FETs) in optoelectronics. Carrier mobility and stability in these FETs are improved by introducing indium (In) and gallium (Ga) cations, respectively. However, the strong trade-off between the mobility and stability, which come from In or Ga incorporation, still limits the widespread use of metal oxide FETs in ultrahigh pixel density and device area-independent flat panel applications. We demonstrated that the incorporation of antimony (Sb) cations in amorphous zinc indium oxide (ZIO) simultaneously enhanced the field-effect mobility (mu(FET)) and electrical stability of the resulting Sb-doped ZIO FETs. The rationale for the unexpected synergic effect was related to the unique electron configuration of Sb5+ ([Kr]4d(10)5s(0)5p(0)). However, the benefit of Sb doping was not observed in the zinc tin oxide (ZTO) system. All the Sb-doped ZTO FETs suffered from a reduction in mu(FET) and a deterioration of gate bias stress stability with an increase in Sb loading. This can be attributed to the formation of heterogeneous defects due to Sb-induced phase separation and the creation of Sb3+ induced acceptor-like trap states. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Comparative Study of Antimony Doping Effects on the Performance of Solution-Processed ZIO and ZTO Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1021/acsami.7b01090 | - |
dc.identifier.scopusid | 2-s2.0-85016469124 | - |
dc.identifier.wosid | 000398246900067 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.12, pp.10904 - 10913 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 9 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 10904 | - |
dc.citation.endPage | 10913 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | AMORPHOUS OXIDE SEMICONDUCTORS | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | ZNO-IN2O3-SNO2 SYSTEM | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | INSTABILITY | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | antimony doping | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | zinc indium oxide | - |
dc.subject.keywordAuthor | zinc tin oxide | - |
dc.subject.keywordAuthor | bias stability | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.7b01090 | - |
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