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Defect Analysis for Field-Effect-Transistor Based on 2D Materials: Drain Current Transient, 1/f noise, and Arrhenius Approach
- Authors
- 정문석
- Issue Date
- 19-Nov-2024
- Place
- 스위스 그랜드 호텔
- Conference Name
- N2D 2024
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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Related Researcher
- Jeong, Mun Seok
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)