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Tunable Ferroelectric Properties of HfO2-Based Oxides: Role of Aluminum Doping and Bottom Electrodes

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dc.contributor.authorHan, Changhyeon-
dc.contributor.authorKwon, Ki Ryun-
dc.contributor.authorJeong, Soi-
dc.contributor.authorKwak, Been-
dc.contributor.authorYim, Jiyong-
dc.contributor.authorPark, Eun Chan-
dc.contributor.authorYou, Ji Won-
dc.contributor.authorChoi, Rino-
dc.contributor.authorKwon, Daewoong-
dc.date.accessioned2025-02-27T04:30:16Z-
dc.date.available2025-02-27T04:30:16Z-
dc.date.issued2025-02-
dc.identifier.issn0018-9383-
dc.identifier.issn1557-9646-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/206602-
dc.description.abstractWe investigate the impact of Al concentrations and different bottom electrodes on the crystallinity, ferroelectricity, energy storage density (ESD), and oxygen defects in HfxZr1-xO2(HZO) materials. Our results reveal that these variations are strongly linked to oxygen vacancy (VO) formation and the stabilization of the tetragonal (t) phase. Higher Al concentrations enhance t-phase stability, suppressing the transition to the orthorhombic (o) phase. This effect, coupled with the bottom electrode configuration, plays a critical role in shaping the properties of HZO. These findings provide valuable guidelines for optimizing ferroelectric (FE) devices through precise control of doping levels and electrode materials.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleTunable Ferroelectric Properties of HfO2-Based Oxides: Role of Aluminum Doping and Bottom Electrodes-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/TED.2024.3517593-
dc.identifier.scopusid2-s2.0-85213700207-
dc.identifier.wosid001385793000001-
dc.identifier.bibliographicCitationIEEE Transactions on Electron Devices, v.72, no.2, pp 635 - 639-
dc.citation.titleIEEE Transactions on Electron Devices-
dc.citation.volume72-
dc.citation.number2-
dc.citation.startPage635-
dc.citation.endPage639-
dc.type.docTypeArticle in press-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusAluminum oxide-
dc.subject.keywordPlusCrystallinity-
dc.subject.keywordPlusDefect density-
dc.subject.keywordPlusFerroelectric devices-
dc.subject.keywordPlusFerroelectric materials-
dc.subject.keywordPlusHafnium oxides-
dc.subject.keywordPlusOxygen vacancies-
dc.subject.keywordPlusSemiconductor doping-
dc.subject.keywordPlusSurface discharges-
dc.subject.keywordAuthorFerroelectric (FE)-
dc.subject.keywordAuthorheterostructure-
dc.subject.keywordAuthorHfxZr1−xO2 (HZO)-
dc.subject.keywordAuthormetal–FE–metal (MFM)-
dc.subject.keywordAuthormorphotropic phase boundary (MPB)-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/10816661-
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