Defect engineering approaches for metal oxide semiconductor-based chemiresistive gas sensing

Abstract

Defect engineering in metal oxides presents a promising approach for tailoring material properties. This strategy enhances gas sorption, catalysis, and control over key physical characteristics such as bandgap, magnetic behavior, and electrical conductivity. Despite its potential, the role of defect engineering in advancing metal oxide semiconductor (MOS) gas-sensing performance remains underexplored. This review introduces defect engineering strategies, emphasizing their applications in gas sensing. Gas sensors play a vital role in environmental monitoring, industrial safety, healthcare, and in improving energy efficiency. The demand for advanced gas sensors has never been more critical, given the need for real-time, accurate, and cost-effective detection of pollutant gases. MOS-based gas sensors are widely used in air quality monitoring, industrial safety, and health diagnostics. Vacancies and defect architectures in MOS have been widely studied for their role in sensing performance, as they fundamentally influence sensor efficiency. The effectiveness of MOS sensors largely depends on the type and concentration of defects. This review introduces vacancies and defects in MOS, followed by an indepth discussion of defect types, factors influencing defect formation, and their role in charge transport. Additionally, it examines the correlation between elemental chemical properties and defect chemistry. Special attention is given to the defect chemistry of metal oxides, including TiO2, ZnO, Co3O4, ZrO2, WO3, and CeO2. It concludes with an examination of surface engineering methods for defect control to improve gas-sensing capabilities.