Designing Robust Interfaces of HZO Module (>1012 at 85 °c) with High Sensing Margin (>300 mV) for ≤1.1 V 1T-1F with Common Plate Line and 1T-nF FeRAM

Abstract

Energy-efficient AI will be realized in conjunction with ferroelectric nT-mF in the near future. First, we present a ferroelectric module solution that is equipped with Pr-boosted HZO (2Pr 54 μ C/cm2) and universally improved ILs for FE, MPB and AFE. The films show high write/read endurance cycles (> 1012 at 85 °C). Second, we implement the solution into 1T-1F with a common plate line and 1T-nF FeRAM. We confirm sufficiently high sensing margins (≥300 mV).