ScholarWorks@Hanyang University

Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Tailoring Crystal Growth via Sn Incorporation for High-Performance ALD IGO FETs

Full metadata record
DC Field Value Language
dc.contributor.authorKim, Gwang-bok-
dc.contributor.authorJeong, Joo-hee-
dc.contributor.authorPark, Soojin-
dc.contributor.authorChoi, Sunghyun-
dc.contributor.authorAn, Jiseong-
dc.contributor.authorPark, Kwangmin-
dc.contributor.authorJeong, Jae Kyeong-
dc.date.accessioned2025-10-28T02:00:08Z-
dc.date.available2025-10-28T02:00:08Z-
dc.date.issued2025-10-
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/208995-
dc.description.abstractThis study presents high-performance field-effect transistors (FETs) using atomic layer deposition (ALD)-derived Sn-doped oxide semiconductors for back-end-of-line (BEOL)-compatible applications. Optimized Sn incorporation promoted (222) face crystal growth, reducing grain boundary density and enhancing carrier transport. The resulting FET exhibited a high mobility of 79.5 cm2/Vs, a low subthreshold swing of 61.0 mV/dec, and stable enhancement-mode operation. Reliability tests confirmed minimal threshold voltage shifts under external bias temperature stress, demonstrating the potential of ALD-based oxide semiconductors for next-generation memory applications.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleTailoring Crystal Growth via Sn Incorporation for High-Performance ALD IGO FETs-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/LED.2025.3601554-
dc.identifier.scopusid2-s2.0-105014012354-
dc.identifier.wosid001585567000011-
dc.identifier.bibliographicCitationIEEE Electron Device Letters, v.46, no.10, pp 1781 - 1784-
dc.citation.titleIEEE Electron Device Letters-
dc.citation.volume46-
dc.citation.number10-
dc.citation.startPage1781-
dc.citation.endPage1784-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordAuthorAtomic Layer Deposition-
dc.subject.keywordAuthorCrystallization-
dc.subject.keywordAuthorIndium Gallium Tin Oxide-
dc.subject.keywordAuthorOxide Semiconductor-
dc.subject.keywordAuthorThin-film Transistor-
dc.subject.keywordAuthorField Effect Transistors-
dc.subject.keywordAuthorGallium Compounds-
dc.subject.keywordAuthorGrain Boundaries-
dc.subject.keywordAuthorGrain Growth-
dc.subject.keywordAuthorMos Devices-
dc.subject.keywordAuthorOxide Semiconductors-
dc.subject.keywordAuthorSemiconducting Indium-
dc.subject.keywordAuthorSemiconducting Indium Compounds-
dc.subject.keywordAuthorSemiconducting Tin Compounds-
dc.subject.keywordAuthorThin Film Circuits-
dc.subject.keywordAuthorThreshold Voltage-
dc.subject.keywordAuthorTin Oxides-
dc.subject.keywordAuthorAtomic-layer Deposition-
dc.subject.keywordAuthorBack End Of Lines-
dc.subject.keywordAuthorC. Thin Film Transistor (tft)-
dc.subject.keywordAuthorCarriers Transport-
dc.subject.keywordAuthorDoped Oxides-
dc.subject.keywordAuthorField-effect Transistor-
dc.subject.keywordAuthorGrain Boundary Densities-
dc.subject.keywordAuthorHigh Mobility-
dc.subject.keywordAuthorPerformance-
dc.subject.keywordAuthorSn-doped-
dc.subject.keywordAuthorAtomic Layer Deposition-
dc.subject.keywordAuthorCrystallization-
dc.subject.keywordAuthorThin Film Transistors-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/11134383-
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Show simple item record

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Jeong, Jae Kyeong photo

Jeong, Jae Kyeong
COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366

COPYRIGHT © 2024 HANYANG UNIVERSITY.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어