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Defect Localized Mechanoluminescence Model in Copper Doped Zinc Sulfide

Authors
Jeong, Hong InDubajic, MilosLee, Cheong BeomWoo, Seung-JeChua, Xian WeiKang, TaeheonHan, YutongYang, JongheeLee, JihoonKo, Seo-JinKang, Dong-WonKim, KyeounghakStranks, Samuel D.Choi, Hyosung
Issue Date
Oct-2025
Publisher
American Chemical Society
Keywords
Mechanoluminescence; mechanoluminescent mechanism; strain-induced defect localized ML model; strain-dependentX-ray diffraction; hyperspectral photoluminescence microscopy; Cu doped ZnS; piezophotonic effect
Citation
ACS Nano, v.19, no.39, pp 35027 - 35036
Pages
10
Indexed
SCIE
SCOPUS
Journal Title
ACS Nano
Volume
19
Number
39
Start Page
35027
End Page
35036
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/209007
DOI
10.1021/acsnano.5c11956
ISSN
1936-0851
1936-086X
Abstract
Doped zinc sulfide microparticles exhibit the ability to mechanically tune their luminescence properties, making them promising candidates for mechanoluminescence materials that can be used in a diverse array of next-generation optoelectronics. However, their mechanism remains unclear and is often attributed to intricate analytical misinterpretations, which impede the development of a fundamental theory for improving this innovative technology. Here, we visualize the mechanoluminescence dynamics of copper-doped zinc sulfide through a hybrid technique in which structural-optical properties are correlated at an identical sample level. These results reveal that Cu defects are much more susceptible to lattice distortion when strain is applied to the global structure, which locally populates charge carriers to the electronic states responsible for mechanoluminescence. This promotes the mechanoluminescence emission from localized defect sites rather than from the global ZnS lattice. Our defect-localized mechanoluminescence model, triggered by an elastic strain, provides fundamental insights into this long-standing enigma, yielding implications for the design of high-performance materials in next-generation applications.
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