Mitigating substrate effects of van der Waals semiconductors using perfluoropolyether self-assembled monolayers
- Authors
- Park, Dae Young; Suh, Hyeong Chan; Bang, Seungho; Lee, Ju Chan; Yoo, Jaekak; Ko, Hayoung; Choi, Soo Ho; Kim, Ki Kang; Lee, Seung Mi; Lim, Seong Chu; Nahm, Tschang-Uh; Jeong, Mun Seok
- Issue Date
- Jun-2024
- Publisher
- Royal Society of Chemistry
- Citation
- Nanoscale, v.16, no.22, pp 10779 - 10788
- Pages
- 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- Nanoscale
- Volume
- 16
- Number
- 22
- Start Page
- 10779
- End Page
- 10788
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/210028
- DOI
- 10.1039/d4nr00061g
- ISSN
- 2040-3364
2040-3372
- Abstract
- The properties of transition metal dichalcogenides (TMDCs) are critically dependent on the dielectric constant of substrates, which significantly limits their application. To address this issue, we used a perfluorinated polyether (PFPE) self-assembled monolayer (SAM) with low surface energy to increase the van der Waals (vdW) gap between TMDCs and the substrate, thereby reducing the interaction between them. This resulted in a reduction in the subthreshold swing value, an increase in the photoluminescence intensity of excitons, and a decrease in the doping effect by the substrate. This work will provide a new way to control the TMDC/dielectric interface and contribute to expanding the applicability of TMDCs.
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