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Mitigating substrate effects of van der Waals semiconductors using perfluoropolyether self-assembled monolayers

Authors
Park, Dae YoungSuh, Hyeong ChanBang, SeunghoLee, Ju ChanYoo, JaekakKo, HayoungChoi, Soo HoKim, Ki KangLee, Seung MiLim, Seong ChuNahm, Tschang-UhJeong, Mun Seok
Issue Date
Jun-2024
Publisher
Royal Society of Chemistry
Citation
Nanoscale, v.16, no.22, pp 10779 - 10788
Pages
10
Indexed
SCIE
SCOPUS
Journal Title
Nanoscale
Volume
16
Number
22
Start Page
10779
End Page
10788
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/210028
DOI
10.1039/d4nr00061g
ISSN
2040-3364
2040-3372
Abstract
The properties of transition metal dichalcogenides (TMDCs) are critically dependent on the dielectric constant of substrates, which significantly limits their application. To address this issue, we used a perfluorinated polyether (PFPE) self-assembled monolayer (SAM) with low surface energy to increase the van der Waals (vdW) gap between TMDCs and the substrate, thereby reducing the interaction between them. This resulted in a reduction in the subthreshold swing value, an increase in the photoluminescence intensity of excitons, and a decrease in the doping effect by the substrate. This work will provide a new way to control the TMDC/dielectric interface and contribute to expanding the applicability of TMDCs.
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