High-Performance P-type Tellurium Field-Effect Transistors by Lignin-Induced Doping

Abstract

The commercial viability of two-dimensional (2D) electronic devices is highly dependent on the availability of high-performance p-type semiconductors, yet the reliance on complex or environmentally detrimental dopants remains a critical obstacle. Here, we introduce a highly efficient and sustainable p-type doping strategy utilizing lignin, a naturally derived, eco-friendly biopolymer, for 2D tellurium (Te) field-effect transistors (FETs). Comprehensive spectroscopic analysis confirms a robust electronic interaction and spontaneous electron transfer mechanism between the lignin layer and the 2D Te channel, leading to effective p-type enhancement. Electrical transport characterization demonstrates that this lignin-induced doping yields remarkable device metrics: specifically, the on/off current ratio is improved by 810-fold, and the hole mobility is significantly enhanced, reaching an impressive value of up to 790 cm2 V–1 s–1. This study demonstrates a powerful, low-cost, and large-area processable green doping technology that simultaneously provides superior device characteristics and environmental compatibility, representing a significant advancement toward the industrial application of 2D FETs.