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A 0.5-1 V,-68 dB Power Supply Rejection Capacitorless Analog LDO Using Voltage-to-Time Conversion in 28-nm CMOS

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dc.contributor.authorJang, Jun-Hwan-
dc.contributor.authorGwon, Hui-Dong-
dc.contributor.authorKong, Tae-Hwang-
dc.contributor.authorYang, Jun-Hyeok-
dc.contributor.authorChoi, Byong-Deok-
dc.date.accessioned2026-03-09T02:00:12Z-
dc.date.available2026-03-09T02:00:12Z-
dc.date.issued2022-08-
dc.identifier.issn0018-9200-
dc.identifier.issn1558-173X-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/211091-
dc.description.abstractThis article proposes an analog low-dropout (LDO) regulator using the voltage-to-time conversion technique to achieve high power-supply-rejection (PSR) at low supply voltages of less than 1 V. Integrating the time-domain signal into the current using a charge pump (CP) provides infinite dc gain, in principle, so that good regulation and high PSR can be achieved. Furthermore, a slew enhancement path using a time-converted signal is proposed to obtain a fast transient response even at low power supply voltages, and an auxiliary feedforward circuit has also been included to ensure wide load range stability. The proposed LDO designed to drive a 100-pF on-chip load capacitor and 150-mA load current was fabricated on a 28-nm CMOS process. The test measurement results show that the proposed LDO can operate in the 0.5-1-V input voltage range and achieved a high PSR of -52 to -68 dB at 1 kHz and -20 to -30 dB at 1 MHz, corresponding to the input voltage. Owing to the slew enhancement path, undershoot and overshoot were suppressed to 94 and 91 mV, respectively, for a 149-mA, 40-ns load current step.-
dc.format.extent12-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA 0.5-1 V,-68 dB Power Supply Rejection Capacitorless Analog LDO Using Voltage-to-Time Conversion in 28-nm CMOS-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/JSSC.2022.3144437-
dc.identifier.scopusid2-s2.0-85124726994-
dc.identifier.wosid000754287500001-
dc.identifier.bibliographicCitationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.57, no.8, pp 2462 - 2473-
dc.citation.titleIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.citation.volume57-
dc.citation.number8-
dc.citation.startPage2462-
dc.citation.endPage2473-
dc.type.docTypeArticle; Early Access-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusLOW-DROPOUT REGULATOR-
dc.subject.keywordPlusDIGITAL LDO-
dc.subject.keywordPlusCHARGE PUMP-
dc.subject.keywordPlusHIGH PSR-
dc.subject.keywordAuthorVoltage control-
dc.subject.keywordAuthorTime-domain analysis-
dc.subject.keywordAuthorRegulation-
dc.subject.keywordAuthorBandwidth-
dc.subject.keywordAuthorCircuit stability-
dc.subject.keywordAuthorGain-
dc.subject.keywordAuthorStability analysis-
dc.subject.keywordAuthorLow-dropout (LDO) regulator-
dc.subject.keywordAuthorpower supply rejection (PSR)-
dc.subject.keywordAuthorvoltage regulator-
dc.subject.keywordAuthorvoltage-to-time converter (VTC)-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9707477-
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