Ultrathin, High-Aspect-Ratio Bismuth Sulfohalide NanowireBundles for Solution-Processed Flexible Photodetectorsopen access
- Authors
- Lee, Da Won; Oh, Seongkeun; Lee, Dong Hyun David; Woo, Ho Young; Ahn, Junhyuk; Kim, Seung Hyeon; Jung, Byung Ku; Choi, Yoonjoo; Kim, Dagam; Yu, Mi Yeon; Park, Chun Gwon; Yun, Hongseok; Kim, Tae-Hyung; Han, Myung Joon; Oh, Soong Ju; Paik, Taejong
- Issue Date
- Sep-2024
- Publisher
- Wiley-VCH Verlag
- Keywords
- flexible devices; nanobundles; nanocrystal inks; nanowires; semiconductors
- Citation
- Advanced Science, v.11, no.33, pp 1 - 12
- Pages
- 12
- Indexed
- SCIE
SCOPUS
- Journal Title
- Advanced Science
- Volume
- 11
- Number
- 33
- Start Page
- 1
- End Page
- 12
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/211167
- DOI
- 10.1002/advs.202403463
- ISSN
- 2198-3844
2198-3844
- Abstract
- In this study, a novel synthesis of ultrathin, highly uniform colloidal bismuth sulfohalide (BiSX where X = Cl, Br, I) nanowires (NWs) and NW bundles (NBs) for room-temperature and solution-processed flexible photodetectors are presented. High-aspect-ratio bismuth sulfobromide (BiSBr) NWs are synthesized via a heat-up method using bismuth bromide and elemental S as precursors and 1-dodecanethiol as a solvent. Bundling of the BiSBr NWs occurs upon the addition of 1-octadecene as a co-solvent. The morphologies of the BiSBr NBs are easily tailored from sheaf-like structures to spherulite nanostructures by changing the solvent ratio. The optical bandgaps are modulated from 1.91 (BiSCl) and 1.88 eV (BiSBr) to 1.53 eV (BiSI) by changing the halide compositions. The optical bandgap of the ultrathin BiSBr NWs and NBs exhibits blueshift, whose origin is investigated through density functional theory-based first-principles calculations. Visible-light photodetectors are fabricated using BiSBr NWs and NBs via solution-based deposition followed by solid-state ligand exchanges. High photo-responsivities and external quantum efficiencies (EQE) are obtained for BiSBr NW and NB films even under strain, which offer a unique opportunity for the application of the novel BiSX NWs and NBs in flexible and environmentally friendly optoelectronic devices.
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