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Vertically-aligned Zn2SnO4–Fe3O4 core-shell microsphere-based thermal interface material with high thermal conductivityVertically-aligned Zn 2 SnO 4-Fe 3 O 4 core-shell microsphere-based thermal interface material with high thermal conductivity

Other Titles
Vertically-aligned Zn 2 SnO 4-Fe 3 O 4 core-shell microsphere-based thermal interface material with high thermal conductivity
Authors
Jung, UijinKim, SangminMoon, JinukHeo, WonjunPark, Jinsub
Issue Date
Jun-2024
Publisher
Elsevier
Keywords
Magnetic field; Thermal interface materials; Vertical alignment; ZTO; ZTO-Fe<sub>3</sub>O<sub>4</sub>
Citation
Ceramics International, v.50, no.12, pp 21703 - 21709
Pages
7
Indexed
SCIE
SCOPUS
Journal Title
Ceramics International
Volume
50
Number
12
Start Page
21703
End Page
21709
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/211457
DOI
10.1016/j.ceramint.2024.03.283
ISSN
0272-8842
1873-3956
Abstract
In this study, we successfully fabricated vertically aligned Zn2SnO4 (ZTO)-Fe3O4 core-shell microsphere (MS)-based thermal interface material (TIM) formed by an external magnetic field. The thermal conductivity of the randomly distributed ZTO-Fe3O4 core-shell/PDMS-based TIMs was enhanced with increasing loading fraction of fillers and TIM with 25 vol % fillers 2.5 times effectively reduced GPU temperature compared to bare PDMS sample. Moreover, the vertically-aligned 25 vol% ZTO-Fe3O4 core-shell filler embedded TIM additionally reduced temperature by 5.1 % and 24.1 % compared to randomly dispersed ZTO-Fe3O4 MS TIMs and bare PDMS, respectively. Experimental results showed that the ZTO-Fe3O4 TIMs can be used as high thermal conductivity TIM filler, and vertically aligned core-shell filler can maximize thermal conductivity by forming an effective thermal path from bottom to top. The theoretical analysis results obtained using COMSOL Multiphysics 5.6 simulation corresponded well with experimental ones. Our suggested vertically aligned ZTO-Fe3O4 core-shell-based TIM can provide an effective heat dissipation path for advanced semiconductor devices with a wide range of applications.
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