Detailed Information

Cited 2 time in webofscience Cited 2 time in scopus
Metadata Downloads

Uniform dehydrogenation of amorphous silicon thin films using a wide thermal annealing system

Full metadata record
DC Field Value Language
dc.contributor.authorJung, Yong Chan-
dc.contributor.authorSeong, Sejong-
dc.contributor.authorLee, Taehoon-
dc.contributor.authorAhn, Jinho-
dc.contributor.authorKim, Tae Hyun-
dc.contributor.authorYeo, Won-Jae-
dc.contributor.authorPark, In-Sung-
dc.date.accessioned2021-08-02T15:51:11Z-
dc.date.available2021-08-02T15:51:11Z-
dc.date.created2021-05-12-
dc.date.issued2017-02-
dc.identifier.issn0268-1242-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21190-
dc.description.abstractTo prevent ablation caused by sudden hydrogen eruption during crystallization of hydrogenated amorphous Si (a-Si:H) thin films, a wide dehydrogenation thermal annealing (wDTA) system was developed to reduce hydrogen content in a-Si:H film prior to its crystallization process. The annealed a-Si:H films were fully dehydrogenated and nanocrystallized by the wDTA system. Raman scattering measurement revealed that the dehydrogenation process lowers the hydrogen content through disappearance of the peak intensity at 2000 cm⁻¹. The a-Si:H film was transformed into nanocrystallized Si with lower residual stress. The major advantage of this wDTA was the large area uniformity of the thermal and the resulting material properties for 8 generation display. The uniform material characteristics of the hydrogen content, thickness, energy bandgap, and transmittance of the annealed Si films in the overall area was confirmed by Raman spectroscopy, spectroscopic ellipsometry, and UV-vis spectrometer measurement.-
dc.language영어-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.titleUniform dehydrogenation of amorphous silicon thin films using a wide thermal annealing system-
dc.typeArticle-
dc.contributor.affiliatedAuthorAhn, Jinho-
dc.identifier.doi10.1088/1361-6641/32/2/025007-
dc.identifier.scopusid2-s2.0-85011347325-
dc.identifier.wosid000393773600006-
dc.identifier.bibliographicCitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.32, no.2-
dc.relation.isPartOfSEMICONDUCTOR SCIENCE AND TECHNOLOGY-
dc.citation.titleSEMICONDUCTOR SCIENCE AND TECHNOLOGY-
dc.citation.volume32-
dc.citation.number2-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusMICRO-RAMAN SPECTROSCOPY-
dc.subject.keywordPlusPOLYCRYSTALLINE SILICON-
dc.subject.keywordPlusSTRESS-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.subject.keywordPlusDEFECTS-
dc.subject.keywordAuthorwide thermal annealing-
dc.subject.keywordAuthordehydrogenation-
dc.subject.keywordAuthorhydrogenated amorphous silicon-
dc.subject.keywordAuthornano-crystallization-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1088/1361-6641/32/2/025007-
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Ahn, Jinho photo

Ahn, Jinho
COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE