In-situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In2O3 Thin-Film Transistors

Abstract

This study investigates the effects of in-situ surface energy engineering applied prior to the deposition of the top gate dielectric on the electrical performance of In<inf>2</inf>O<inf>3</inf> TFTs. O<inf>2</inf> plasma treatment effectively reduces the interfacial trap density at the In<inf>2</inf>O<inf>3</inf>/gate dielectric interface, enhancing the overall device performance. Notably, In<inf>2</inf>O<inf>3</inf> TFTs subjected to an optimized oxygen plasma treatment duration of 3 sec exhibited significant improvements in electrical characteristics, including a high field-effect mobility of 84.3 cm2/V·s, a steep subthreshold swing of 76.8 mV/dec, and a minimal threshold voltage shift of 20 mV under rigorous bias temperature stress conditions (an electric field of 4 MV/cm at 85 °C for 3600 sec).