Enhancing performance of microbolometers by utilizing low-temperature polycrystalline silicon

Abstract

In response to the urgent need for advanced noncontact temperature sensing technologies to mitigate pandemic transmission, there has been a notable surge in global demand. Thermal cameras, combined with infrared sensors, are critical not only for high-resolution imaging but also for cost-effective commercialization. Amorphous silicon-based microbolometers offer advantages in terms of integration and cost compatibility with conventional silicon processes. However, they suffer from limitations in their electrical properties, particularly in the noise-equivalent temperature difference. This study examines the effectiveness of low-temperature polycrystalline silicon (poly-Si) as an active material for microbolometer cells compared to amorphous silicon, focusing on improving the temperature coefficient of resistance (TCR) and lowering the noise density. Our investigation reveals that various parameters, such as dehydrogenation temperatures ranging from 350 to 550 °C, diverse laser annealing techniques (including single, step and multishot methods), and laser power density levels ranging from 150 to 300 mJ/cm2, influence the grain size trends of poly-Si. Using these methods, we produced poly-Si films with grain sizes ranging from 15 to 40 nm, which were used as the active layer in bolometer cells. The final part of our study assessed the TCR and noise density in devices with different poly-Si grain sizes. The TCR/noise density ratio was 3.5 times better in poly-Si devices compared to amorphous silicon devices. This study evaluates poly-Si as an active material for microbolometers, paving the way for future research and development in next-generation infrared sensor technology.