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CMOS-Compatible Oxide TFT-Based 2T-2C Near-Pixel Analog Compute Cell with ADC/DAC-Free Sensor Interface for Energy-Efficient Feature Extraction
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Seonjae | - |
| dc.contributor.author | Kim, Seungyeob | - |
| dc.contributor.author | Cheon, Seungmin | - |
| dc.contributor.author | Jung, Taeseung | - |
| dc.contributor.author | Ahn, Jinho | - |
| dc.contributor.author | Jeon, Sanghun | - |
| dc.date.accessioned | 2026-04-20T07:30:13Z | - |
| dc.date.available | 2026-04-20T07:30:13Z | - |
| dc.date.issued | 2026-01 | - |
| dc.identifier.issn | 0163-1918 | - |
| dc.identifier.issn | 2156-017X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212256 | - |
| dc.description.abstract | This work presents a CMOS-compatible 2T-2C near-pixel compute cell based on oxide TFTs with an ADC/DAC-free sensor interface, enabling energy-efficient analog-domain feature extraction for vision systems. The cell integrates IGZO TFTs and HfO2 capacitors to support signed-weight MAC operations without requiring ADC/DAC. A comparator circuit allows direct analog-to-pulse conversion from a photodiode, enabling one-to-one sensor-to-cell mapping. The fabricated device demonstrates linear weight updates, strong retention, and calibrated MAC accuracy (R2 = 0.992). Compared to 2T-0C, it achieves up to 93% lower power and up to 43% smaller footprint in peripheral circuits. CNN simulations using 2T-2C-based feature maps achieve 99.6% classification accuracy, highlighting its potential for low-power, high-accuracy near-sensor vision. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | CMOS-Compatible Oxide TFT-Based 2T-2C Near-Pixel Analog Compute Cell with ADC/DAC-Free Sensor Interface for Energy-Efficient Feature Extraction | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/IEDM50572.2025.11353863 | - |
| dc.identifier.scopusid | 2-s2.0-105033541979 | - |
| dc.identifier.wosid | 001701480300270 | - |
| dc.identifier.bibliographicCitation | 2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4 | - |
| dc.citation.title | 2025 IEEE International Electron Devices Meeting (IEDM) | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 4 | - |
| dc.type.docType | Conference paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Computer Science | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Computer Science, Hardware & Architecture | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | Analog to digital conversion | - |
| dc.subject.keywordPlus | Cells | - |
| dc.subject.keywordPlus | CMOS integrated circuits | - |
| dc.subject.keywordPlus | Comparator circuits | - |
| dc.subject.keywordPlus | Energy efficiency | - |
| dc.subject.keywordPlus | Extraction | - |
| dc.subject.keywordPlus | Low power electronics | - |
| dc.subject.keywordPlus | Pixels | - |
| dc.subject.keywordPlus | Thin film transistors | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/11353863 | - |
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