Nickel and Nickel Oxide Thin Films as Absorber Layer Materials of Extreme Ultraviolet Masks
DC Field | Value | Language |
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dc.contributor.author | Woo, Dong Gon | - |
dc.contributor.author | Kim, Jung Sik | - |
dc.contributor.author | Hong, Seongchul | - |
dc.contributor.author | Ahn, Jinho | - |
dc.date.accessioned | 2021-08-02T15:51:52Z | - |
dc.date.available | 2021-08-02T15:51:52Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-01 | - |
dc.identifier.issn | 1941-4900 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21235 | - |
dc.description.abstract | We propose nickel and nickel oxide as absorber materials in extreme ultraviolet (EUV) masks in order to mitigate the shadowing effect caused by a combination of absorber pattern height and oblique incidence angle (theta = 6 degrees) of the EUV light. Since Ni-based materials have high extinction coefficients (k = 0.0549-0.07359), they exhibit lower EUV reflectivity than tantalum compounds that are widely studied as absorber materials for EUV mask. Therefore, EUV mask with a thinner Ni based absorber shows image contrast and normalized image log slope (NILS) comparable to those of a mask with a thicker Ta-based absorber. Further, the Ni-based absorber reduces horizontalvertical critical dimension (H-V CD) bias and show improved focus margin because of smaller CD variation with focus shift. Therefore, the lithographic process window can be enlarged by adopting Ni-based absorber. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Nickel and Nickel Oxide Thin Films as Absorber Layer Materials of Extreme Ultraviolet Masks | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.1166/nnl.2017.2294 | - |
dc.identifier.scopusid | 2-s2.0-85013842487 | - |
dc.identifier.wosid | 000394993500004 | - |
dc.identifier.bibliographicCitation | NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.9, no.1, pp.20 - 23 | - |
dc.relation.isPartOf | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.citation.title | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 20 | - |
dc.citation.endPage | 23 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | FLARE | - |
dc.subject.keywordPlus | ANGLE | - |
dc.subject.keywordAuthor | EUV | - |
dc.subject.keywordAuthor | Lithography | - |
dc.subject.keywordAuthor | Mask | - |
dc.subject.keywordAuthor | Nickel | - |
dc.subject.keywordAuthor | Absorber Layer | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/nnl/2017/00000009/00000001/art00004;jsessionid=5p07e9o4k2oqr.x-ic-live-01 | - |
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