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Improving etchability and imaging performance of EUV mask absorber materials via ion implantation (Vol 132, 245, 2026)

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dc.contributor.authorKim, Yunsoo-
dc.contributor.authorJeong, Dongmin-
dc.contributor.authorLee, Seungho-
dc.contributor.authorKim, Bom-Sok-
dc.contributor.authorKim, Myung-Jin-
dc.contributor.authorLee, Taeho-
dc.contributor.authorAhn, Jinho-
dc.date.accessioned2026-05-04T06:30:30Z-
dc.date.available2026-05-04T06:30:30Z-
dc.date.issued2026-04-
dc.identifier.issn0947-8396-
dc.identifier.issn1432-0630-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212496-
dc.description.abstractIn this article Jinho Ahn should have been denoted as a corresponding author. The original article has been updated. © The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2026.-
dc.format.extent1-
dc.language영어-
dc.language.isoENG-
dc.publisherSPRINGER HEIDELBERG-
dc.titleImproving etchability and imaging performance of EUV mask absorber materials via ion implantation (Vol 132, 245, 2026)-
dc.title.alternativeCorrection: Improving etchability and imaging performance of EUV mask absorber materials via ion implantation (Applied Physics A, (2026), 132, 4, (245), 10.1007/s00339-026-09450-0)-
dc.typeArticle-
dc.publisher.location독일-
dc.identifier.doi10.1007/s00339-026-09561-8-
dc.identifier.scopusid2-s2.0-105036666920-
dc.identifier.wosid001743621600001-
dc.identifier.bibliographicCitationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.132, no.5, pp 1 - 1-
dc.citation.titleAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.citation.volume132-
dc.citation.number5-
dc.citation.startPage1-
dc.citation.endPage1-
dc.type.docTypeCorrection-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.identifier.urlhttps://link.springer.com/article/10.1007/s00339-026-09561-8-
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