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Comparative study of poly(para-xylylene) derivatives as gate dielectrics for organic field-effect transistorsopen access

Authors
Lee, SeokjinLim, SunhyukChoi, GyuhyeonBae, Sang WooBae, KoungyulBae, SangkyunKim, Young-HoonPark, Hyunjin
Issue Date
Jul-2026
Publisher
Elsevier B.V.
Keywords
Dielectric property; Electrical stability; Gate dielectric; Organic field-effect transistor; Poly(para-xylylene)
Citation
Organic Electronics, v.154, pp 1 - 6
Pages
6
Indexed
SCIE
SCOPUS
Journal Title
Organic Electronics
Volume
154
Start Page
1
End Page
6
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212517
DOI
10.1016/j.orgel.2026.107426
ISSN
1566-1199
1878-5530
Abstract
Poly(para-xylylene) (Parylene) has attracted considerable attention as a gate dielectric material for organic field-effect transistors (OFETs) owing to its conformal and facile deposition, excellent mechanical flexibility, and reliable dielectric properties. Despite these advantages, the dielectric properties of different Parylene derivatives have not yet been systematically compared, and the influence of their chemical structures on the device performance and long-term bias stability of OFETs remains insufficiently understood. Here, we present a comprehensive comparative study of commercially available Parylene derivatives as gate dielectrics for OFETs. By correlating their dielectric properties with device performance and long-term bias stability, this work elucidates the critical role of chemical structure in governing charge transport behavior and interfacial characteristics. Furthermore, the results provide practical design guidelines for selecting and engineering Parylene-based gate dielectrics, thereby offering a systematic strategy for the development of high-performance flexible electronics.
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