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Transition from unstable defect-dominated to stable precipitation-controlled behavior in laser powder bed fused AlSi7Mg via direct hot isostatic pressingopen access

Authors
Han, Seung JunKim, Won RaeKang, Kyeong RokLee, Taeg WooKim, Gun-HeeHwang, Woo JinHwang, Young JaeJeong, JaekiKang, Hyun-SuHan, Hyuk-SuKim, Hyung Giun
Issue Date
May-2026
Publisher
ELSEVIER
Keywords
Additive manufacturing; Laser-based powder fusion; Hot isostatic pressing; Aluminium alloy; AlSi7Mg
Citation
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, v.42, pp 4571 - 4586
Pages
16
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
Volume
42
Start Page
4571
End Page
4586
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212525
DOI
10.1016/j.jmrt.2026.04.093
ISSN
2238-7854
2214-0697
Abstract
This study investigates how direct hot isostatic pressing (HIP) post treatment influences the density, microstructure, electrical, thermal conductivity, and mechanical properties of AlSi7Mg components fabricated by laser-based powder fusion (PBF-LB). PBF-LB samples were produced and subsequently subjected to a thermo-mechanical HIP process (180-480 °C, 2000 bar, 2 h). The As-built specimens exhibited a relative density of 99.97 %, tensile strength of 418.7 MPa, yield strength of 267.7 MPa, and elongation of 13.7 %, with electrical and thermal conductivities of 28.1 % IACS and 130 W/m·K, respectively. Increasing HIP temperature effectively eliminated internal pores and relaxed residual stress without inducing recrystallization, while promoting Si precipitation and coarsening within the α-Al matrix. At the HIP temperature of 180 °C, partial stress relaxation occurs however, the Si cellular network and dislocation structures are largely preserved, enabling the microstructure to remain controlled and resulting in strength comparable to the As-built condition while maintaining a relatively high specific strength. After the HIP process at 480 °C, the electrical conductivity and thermal conductivity increased to 47.2 % IACS and 194 W/m·K, respectively, with a relative density of 99.999 %, while elongation increased to 31.4 %. Overall, the direct HIP provides an efficient route to achieve nearly pore free, stress relieved, and thermally stable AlSi7Mg components with excellent conductivity and ductility. These results reveal a clear transition from a defect dominated unstable strengthening mechanism in the As-built condition to a densification, precipitation and recovery controlled stable strengthening mechanism by applying direct HIP process
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COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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