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A low-complexity and high-frequency ASIC transceiver for an ultrasound imaging system

Authors
Lee, JaehoHuh, Keun YoungKang, DongilLim, JaemyungLee, Byung ChulLee, Byunghun
Issue Date
Nov-2024
Publisher
대한의용생체공학회
Keywords
Capacitive micromachined ultrasonic transducer; Ultrasonic transceiver; Application-specific integrated circuit; Low design complexity; Wide bandwidth; High voltage pulser
Citation
Biomedical Engineering Letters (BMEL), v.14, no.6, pp 1377 - 1384
Pages
8
Indexed
SCIE
SCOPUS
KCI
Journal Title
Biomedical Engineering Letters (BMEL)
Volume
14
Number
6
Start Page
1377
End Page
1384
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/213992
DOI
10.1007/s13534-024-00411-1
ISSN
2093-9868
2093-985X
Abstract
This article presents a high-frequency application-specific integrated circuit (ASIC) transceiver for an ultrasound imaging system designed with a focus on low complexity. To simplify the design, it employs a conventional Class-D power amplifier structure for the transmitter (TX) and a resistive feedback transimpedance amplifier (TIA), which consists of a common-source amplifier followed by a source follower for the receiver (RX). Through careful optimization, the RX achieves a measured transimpedance gain of 90 dBΩ and an input-referred noise of 5.6 pA/√Hz at 30 MHz while maintaining a wide bandwidth of up to 30 MHz for both the TX and RX. The power consumption of the TX and RX is measured to be 7.767 mW and 2.5 mW, respectively. Further acoustic performance, assessed using an annular capacitive micromachined ultrasonic transducer (CMUT), showed a 1.78 kPa peak pressure from a 20 V pulser and confirmed the full bandwidth compatibility of the CMUT’s bandwidth. The ASIC transceiver has been fabricated using a 0.18 μm HV bipolar-CMOS-DMOS (BCD) process.
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서울 공과대학 > ETC > 1. Journal Articles
서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

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