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The effect of electron and ion beam on Si etching generated in a low pressure inductively coupled plasma with a DC-biased Grids
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정진욱 | - |
| dc.date.accessioned | 2026-06-22T07:02:40Z | - |
| dc.date.available | 2026-06-22T07:02:40Z | - |
| dc.date.issued | 2025-02-26 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/214027 | - |
| dc.title | The effect of electron and ion beam on Si etching generated in a low pressure inductively coupled plasma with a DC-biased Grids | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | SPIE Advanced Lithography + Patterning 2025 | - |
| dc.citation.conferencePlace | San Jose, California, US | - |
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