Effects of the radio-frequency sputtering power of an MgO tunneling barrier on the tunneling magneto-resistance ratio for Co2Fe6B2/MgO-based perpendicular-magnetic tunnel junctions
DC Field | Value | Language |
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dc.contributor.author | Lee, Du-Yeong | - |
dc.contributor.author | Seo, Hyung-Tak | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2021-08-02T15:55:44Z | - |
dc.date.available | 2021-08-02T15:55:44Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-11 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21405 | - |
dc.description.abstract | For Co2Fe6B2-MgO based p-MTJ spin valves with [Co/Pt](n)-SyAF layers ex situ annealed at 350 degrees C and 30 kOe for 30 min, the tunneling magneto-resistance (TMR) ratio strongly depended on the radio-frequency (RF) sputtering power in a 0.65-1.15 nm thick MgO tunneling barrier, achieving a TMR ratio of 168% at 300 W. The TMR ratio rapidly and linearly increased with a decrease in the RF sputtering power between 300 and 500 W and then abruptly decreased at 250 W since the face-centered-cubic crystallinity of the tunneling barrier improved with a decrease in the RF sputtering power between 300 and 500 W and then abruptly degraded at 250 W. Optical properties measured by spectroscopic ellipsometry, such as the defect state density and energy band gap of a similar to 1.0 nm thick tunneling barrier layer, indicate that the RF sputtering power needed to obtain a larger poly grain size for the barrier tends to enhance the barrier's face-centered-cubic crystallinity. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Effects of the radio-frequency sputtering power of an MgO tunneling barrier on the tunneling magneto-resistance ratio for Co2Fe6B2/MgO-based perpendicular-magnetic tunnel junctions | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1039/c5tc03669k | - |
dc.identifier.scopusid | 2-s2.0-84951161516 | - |
dc.identifier.wosid | 000366912500016 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.4, no.1, pp.135 - 141 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 4 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 135 | - |
dc.citation.endPage | 141 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | COFEB THIN-FILMS | - |
dc.subject.keywordPlus | MAGNESIUM | - |
dc.subject.keywordPlus | ANISOTROPY | - |
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