Electrical Characteristics of AlGaN/GaN Schottky Barrier Diodes with Different Capping Layers
- Authors
- Yang, Taeyoung; Kim, Minjun; Lee, Jae Hoon; Kim, Sohyeon; Kim, Kyoung-Kook; Park, Jinsub
- Issue Date
- Nov-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Schottky Barrier Diode; AlGaN; Capping Layer
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.11, pp.11635 - 11639
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 11
- Start Page
- 11635
- End Page
- 11639
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21418
- DOI
- 10.1166/jnn.2016.13565
- ISSN
- 1533-4880
- Abstract
- We investigated the effects of various capping layers on the device performance of AlGaN/GaN Schottky barrier diodes (SBDs). The electrical characteristics of SBDs containing Ni/Au and Ti/Al/Ni/Au electrodes for the Schottky and Ohmic contacts, respectively, were observed by employing a current-voltage (I-V) measurement system. The I-V measurement results show that the reverse leakage current in the n-GaN capping layer formed on AlGaN/GaN SBD is 6-7 orders higher than those of the SBDs, both with the u-GaN capping layer and without a capping layer. The observed threading dislocation density (TDD) obtained by atomic force microscopy analysis of the different capping layer surfaces revealed that the n-GaN capping layer sample has almost a 3 times higher TDD than that of the samples both with the u-GaN capping layer and without a capping layer. From the proportional relationship between the TDD and leakage current level, threading dislocation can be the dominant path for the leakage current flow in AlGaN/GaN SBDs.
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