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Improving Hydrogen Resistance of ALD-Processed Oxide Semiconductors through Prioritizing Factors for Memory Device
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진성 | - |
| dc.date.accessioned | 2026-06-24T14:09:31Z | - |
| dc.date.available | 2026-06-24T14:09:31Z | - |
| dc.date.issued | 2025-02-14 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/215263 | - |
| dc.title | Improving Hydrogen Resistance of ALD-Processed Oxide Semiconductors through Prioritizing Factors for Memory Device | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제 32회 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 강원도 하이원리조트 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)